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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Preliminary Specification
FEATURES:
* High Gain: - Typically 30 dB gain across 2.4~2.5 GHz over temperature 0C to +85C High linear output power: - >28 dBm P1dB - Please refer to "Absolute Maximum Stress Ratings" on page 4 - Meets 802.11g OFDM ACPR requirement up to 23.5 dBm - ~3% added EVM up to 20 dBm for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 23.5 dBm High power-added efficiency/Low operating current for both 802.11g/b applications - ~34%/200 mA @ POUT = 23.5 dBm for 802.11b/g Single-pin low IREF power-up/down control - IREF <2 mA Low idle current - ~85 mA ICQ High-speed power-up/down - Turn on/off time (10%- 90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * Low Shut-down Current (~2 A) * High temperature stability - ~1 dB gain/power variation between 0C to +85C * Excellent On-chip power detection * 20 dB dynamic range on-chip power detection * Simple input/output matching * Packages available - 12-contact XQFN - 2mm x 2mm * All non-Pb (lead-free) devices are RoHS compliant
*
*
APPLICATIONS:
* * * * WLAN (IEEE 802.11b/g) Home RF Cordless phones 2.4 GHz ISM wireless equipment
* * *
PRODUCT DESCRIPTION
The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP08 can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 30 dB gain with 34% power-added efficiency (PAE) @ POUT = 23.5 dBm for 802.11b/g. The SST12LP08 has excellent linearity, typically ~3% added EVM at 20 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dBm. The SST12LP08 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP08 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP08 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications.
(c)2009 Silicon Storage Technology, Inc. S71399-01-000 05/09 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
The SST12LP08 has power detector, which dB-wise linearization. detector provides a power control.
an excellent on-chip, single-ended features wide-range (>15 dB) with The excellent on-chip power reliable solution to board-level
The SST12LP08 is offered in 12-contact XQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
FUNCTIONAL BLOCKS
VCC1 11
NC
12 NC RFIN NC 1 2 3
10 9 8 NC RFOUT/VCC2 NC
NC 7 6 DET
Bias Circuit
4 VCCb
FIGURE 1: Functional Block Diagram
5 VREF
1399 B1.0
(c)2009 Silicon Storage Technology, Inc.
S71399-01-000
05/09
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
PIN ASSIGNMENTS
VCC1 11
NC
12 NC RFIN NC 1
10 9 NC RFOUT/VCC2 NC
Top View 2 3 4 VCCb 5 VREF 6 DET
1399 P1.0
NC 8 7
Function Low-inductance GND pad Unconnected pin I RF input, DC decoupled Unconnected pin Supply voltage for bias circuit 1st and 2nd stage idle current control On-chip power detector Unconnected pin Power Supply, 2nd stage / RF output Unconnected pin Unconnected pin O Power supply, 1st stage Unconnected pin
T1.0 1399
(Contacts facing down)
FIGURE 2: Pin Assignments for 12-contact XQFN
PIN DESCRIPTIONS
TABLE 1: Pin Description
Symbol GND NC RFIN NC VCCb VREF DET NC VCC2/RFOUT NC NC VCC1 NC
1. I=Input, O=Output
Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12
Pin Name Ground No Connection No Connection Power Supply
Type1
PWR PWR
No Connection Power Supply No Connection No Connection Power Supply No Connection PWR PWR/O
(c)2009 Silicon Storage Technology, Inc.
S71399-01-000
05/09
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 3 through 10 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Input power to pin 2 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm Average output power (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm Supply Voltage at pins 4, 8, and 11 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V Reference voltage to pin 5 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V DC supply current (ICC)2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating of average output power could cause permanent damage to the device. 2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Operating Range
Range Industrial Ambient Temp -40C to +85C VCC 3.3V
TABLE 2: DC Electrical Characteristics at 25C
Symbol VCC ICC ICQ VREG Parameter Supply Voltage at pins 4, 8, 11 Supply Current for 802.11b/g, 23.5 dBm Idle current for 802.11g to meet EVM ~3% @ 20 dBm Reference Voltage for, with 130 resistor 2.75 Min. 3.0 Typ 3.3 200 85 2.85 2.95 Max. 3.6 Unit V mA mA V
T2.1 1399
Test Conditions
TABLE 3: AC Electrical Characteristics for Configuration at 25C
Symbol FL-U G GVAR1 GVAR2 ACPR Added EVM 2f, 3f, 4f, 5f Parameter Frequency range Small signal gain Gain variation over band (2412-2484 MHz) Gain ripple over channel (20 MHz) Meet 11b spectrum mask Meet 11g OFDM 54 Mbps spectrum mask @ 20 dBm output with 11g OFDM 54 Mbps signal Harmonics at 22 dBm, without external filters 23 23 3 -40 0.2 Min. 2412 29 30 0.5 Typ Max. 2484 Unit MHz dB dB dB dBm dBm % dBc
T3.2 1399
(c)2009 Silicon Storage Technology, Inc.
S71399-01-000
05/09
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VCC = 3.3V, TA = 25C, unless otherwise specified
S11 versus Frequency
0 -5 -10 -15 -20 -25 -30 0.0 S12 (dB) 0 -10 -20 S11 (dB) -30 -40 -50 -60 -70 -80 0.0
S12 versus Frequency
1.0
2.0
3.0
4.0
5.0
6.0
7.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
Frequency (GHz)
S21 versus Frequency
40 30 20 S21 (dB) S22 (dB) 10 0 -10 -20 -30 -40 0.0 -25 -30 0.0 -10 -15 -20 0 -5
S22 versus Frequency
1.0
2.0
3.0
4.0
5.0
6.0
7.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
Frequency (GHz)
1399 S-Parms.1.1
FIGURE 3: S-Parameters
(c)2009 Silicon Storage Technology, Inc.
S71399-01-000
05/09
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VCC = 3.3V, TA = 25C, 54 Mbps 802.11g OFDM Signal
EVM versus Output Power
10 9 8 7 Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz
EVM (%)
6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
1391 F4.1
FIGURE 4: EVM versus Output Power
Power Gain versus Output Power
40 38 36 Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz
Power Gain (dB)
34 32 30 28 26 24 22 20 9 10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
1391 F5.1
FIGURE 5: Power Gain versus Output Power
(c)2009 Silicon Storage Technology, Inc.
S71399-01-000
05/09
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
Supply Current versus Output Power
200 190 180 Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz
Supply Current (mA)
170 160 150 140 130 120 110 100 90 80 9 10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
1391 F6.1
FIGURE 6: Total Current Consumption for 802.11g operation versus Output Power
PAE versus Output Power
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 9 10
Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz
PAE (%)
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
1391 F7.1
FIGURE 7: PAE versus Output Power
(c)2009 Silicon Storage Technology, Inc.
S71399-01-000
05/09
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
Detector Voltage versus Output Power
1.8 1.7 Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Detector Voltage (V)
Output Power (dBm)
FIGURE 8: Detector Characteristics versus Output Power
1391 F8.3
10
Freq = 2.412 GHZ
0
Freq = 2.442 GHz
-10
Freq = 2.472 GHz
Amplitude (dB)
-20 -30 -40 -50 -60 -70 2.3 5 2.4 0 2.45 2.50 2.55
1399 F9.0
Frequency (GHz)
FIGURE 9: 802.11g Spectrum Mask at 23.5 dBm, Total Current 200 mA
(c)2009 Silicon Storage Technology, Inc.
S71399-01-000
05/09
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VCC = 3.3V, TA = 25C, 1 Mbps 802.11b CCK Signal
10 0 -10 -20 -30 -40 -50 -60 -70 -80 2.35 2.40 2.45 2.50 2.55
1399 F10.0 Freq = 2.412 GHZ Freq = 2.442 GHz Freq = 2.484 GHz
Amplitude (dB)
Frequency (GHz)
FIGURE 10: 802.11b Spectrum Mask at 23.5 dBm, Total Current 200mA
Vcc 4.7 F 0.1 F 0.1 F
12 1
50 /280 mil RFin 1.0 pF
11
10 9
12 nH
50 / 140 mil
100 pF RFOUT 2.0 pF
2 3 Bias Circuit 4
0.1 F
8 7 6
5
100 pF
Suggested operation conditions: 1. VCC = 3.3V 2. VREG=2.85V
R1 = 75
22 pF
VREF
VDet
1399 Schematic 1.0
FIGURE 11: Typical Schematic for High-Power/High-Efficiency 802.11b/g Applications
(c)2009 Silicon Storage Technology, Inc. S71399-01-000 05/09
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
PRODUCT ORDERING INFORMATION
SST12LP SSTXXLP 08 XX - QXB - XXX E X Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier B = 12 contact Package Type QX = XQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = SST Communications
1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant".
Valid combinations for SST12LP08 SST12LP08-QXBE SST12LP08 Evaluation Kits SST12LP08-QXBE-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2009 Silicon Storage Technology, Inc.
S71399-01-000
05/09
10
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
PACKAGING DIAGRAMS
TOP VIEW SIDE VIEW BOTTOM VIEW
See notes 2 and 3 Pin #1
Pin #1 (Laser Engraved)
0.075
2.00 0.05 0.265 0.165 2.00 0.05 0.50 0.40 0.05 Max 0.25 0.15
0.92 0.4 BSC
0.34 0.24
1mm
12-xqfn-2x2-QXB-1.0
Note: 1. Complies with JEDEC JEP95 MO-220J, variant VEED-4 except external paddle nominal dimensions and pull-back of terminals from body edge. 2. From the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle must be soldered to the PC board; it is required to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min).
FIGURE 12: 12-Contact Extremely-thin Quad Flat No-lead (XQFN) SST Package Code: QXB TABLE 4: Revision History
Revision 00 01 Description Date Apr 2009 May 2009
* *
Initial release of data sheet Revised Figure 8 on page 8
(c)2009 Silicon Storage Technology, Inc.
S71399-01-000
05/09
11
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08
Preliminary Specification
CONTACT INFORMATION Marketing
SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605
Sales and Marketing Offices
NORTH AMERICA Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, CA 94086-5308 Tel: 408-735-9110 Fax: 408-735-9036 ASIA PACIFIC NORTH SST Macao Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: 853-2870-6022 Fax: 853-2870-6023 ASIA PACIFIC SOUTH SST Communications Co. 16F-6, No. 75, Sec.1, Sintai 5th Rd Sijhih City, Taipei County 22101 Taiwan, R.O.C. Tel: 886-2-8698-1198 Fax: 886-2-8698-1190
EUROPE Silicon Storage Technology Ltd. Mark House 9-11 Queens Road Hersham, Surrey KT12 5LU UK Tel: 44 (0) 1932-238133 Fax: 44 (0) 1932-230567 JAPAN SST Japan NOF Tameike Bldg, 9F 1-1-14 Akasaka, Minato-ku Tokyo, Japan 107-0052 Tel: 81-3-5575-5515 Fax:81-3-5575-5516
KOREA SST Korea 6F, Heungkuk Life Insurance Bldg 6-7 Sunae-Dong, Bundang-Gu, Sungnam-Si Kyungki-Do, Korea, 463-020 Tel: 82-31-715-9138 Fax: 82-31-715-9137
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com
(c)2009 Silicon Storage Technology, Inc. S71399-01-000 05/09
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